概览
描述
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The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Application note AN9315 illustrates the use of these devices as RF amplifiers.
特性
- NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
- NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130
- NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V
- PNP transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
- PNP current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . . 60
- PNP early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . .20V
- Noise figure (50Ω) at 1.0GHz. . . . . . . . . . . . . . . . . . 3.5dB
- Collector to collector leakage . . . . . . . . . . . . . . . . . . .1pA
- Complete isolation between transistors
- Pin compatible with industry standard 3XXX series arrays
- Pb-free (RoHS compliant)
产品对比
应用
文档
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类型 | 文档标题 | 日期 |
数据手册 | PDF 779 KB | |
应用说明 | PDF 338 KB | |
EOL 通告 | PDF 200 KB | |
产品变更通告 | PDF 152 KB | |
EOL 通告 | PDF 692 KB | |
应用说明 | PDF 357 KB | |
应用说明 | PDF 353 KB | |
应用说明 | PDF 299 KB | |
应用说明 | PDF 268 KB | |
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