概览
描述
Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) feature an exclusive trench gate configuration in the process structure. These devices deliver faster switching performance compared to earlier IGBT generations and reduce conduction losses by lowering the saturation voltage.
The RBN50N65T1UFWA 650V/50A IGBT offers a low collector-to-emitter saturation voltage, making it suitable for power switching applications. It is available as an unsawn wafer.
特性
- Renesas generation 8th Trench IGBT
- Low collector to emitter saturation voltage
- High speed switching
- Unsawn wafer
- Wafer size = 200mm
- Quality grade: Standard
产品对比
应用
- UPS
- Welding
- Photovoltaic inverters
- Power converter system
文档
相关文档
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| 类型 | 文档标题 | 日期 |
| 数据手册 | PDF 140 KB | |
| 应用笔记 | PDF 521 KB 日本語 | |
| 应用笔记 | PDF 881 KB 日本語 | |
| 应用笔记 | PDF 712 KB 日本語 | |
| 应用笔记 | PDF 842 KB | |
| 应用笔记 | PDF 1.05 MB 日本語 | |
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