瑞萨电子 (Renesas Electronics Corporation)
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RJP6831PJWS

不推荐用于新设计不推荐用于新设计

750V – 300A – IGBT Chip

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RJP6831PJWS Datasheet

概览

Renesas' AE4 IGBTs for automotive applications use a unique trench gate configuration in their process structure. These devices achieve low saturation voltage without sacrificing robustness and also have low switching loss. This 750V/300A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.

  • 750V trench & field stop high AE4 technology
  • Low collector to emitter saturation voltage VCE(sat) = 1.4V typ. (at IC = 300A, VGE = 15V, Tj = 25 ℃)
  • Low switching loss
  • Easy paralleling by internal Rg
  • AEC Q101 (HTRB, HTGB) qualified

文档

设计和开发

ECAD 模块

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扩展 ECAD 模块
Diagram of ECAD Models

模型
类型 文档标题 日期
模型 - 其他
Renesas PLECS Model
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模型 - 其他
AE4 Half Bridge 3-Phase Inverter PLECS Model
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模型 - SPICE
RJP6831PJWS Ltspice Data
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模型 - SPICE
RJP6831PJWS Pspice Data
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4 items

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