概览
描述
The 4DB0124K is a DDR4 Data Buffer with a dual 4-bit bidirectional data register with differential strobes is designed for 1.2 VDD operation.
特性
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Pinout optimized DDR4 LRDIMM PCB layout
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DDR4-1600/1866/2133
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Supports CKE Power Down operation mode
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Provides access to internal control words for configuring the device features and adapting in different LRDIMM and system applications
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Available in 53-ball Fine-Pitch BGA (FPGA) with 0.50mm ball pitch, 14 x 5 Grid with 17 balls depopulated, 7.5mm x 3.0mm Package as defined in MO-276 (Issue F, Variation DA)
产品对比
应用
文档
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类型 | 文档标题 | 日期 |
概览 | PDF 515 KB | |
EOL 通告 | PDF 536 KB | |
产品变更通告 | PDF 32 KB | |
白皮书 | PDF 1.08 MB | |
产品变更通告 | PDF 207 KB | |
白皮书 | PDF 5.22 MB | |
6 items
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设计和开发
模型
ECAD 模块
点击产品选项表中的 CAD 模型链接,查找 SamacSys 中的原理图符号、PCB 焊盘布局和 3D CAD 模型。如果符号和模型不可用,可直接在 SamacSys 请求该符号或模型。

产品选项
当前筛选条件
视频和培训
A white paper authored by IDT (acquired by Renesas) and Micron details research into memory and bandwidth for today's high-performance servers. LRDIMMS and RDIMMS traditionally have been seen as complementary, with the former targeting applications requiring deeper memory and the latter for applications requiring higher bandwidth.
The introduction of 8-gigabit DRAMS has resulted in a growing number of Internet applications benefiting from both deeper memories and higher bandwidth. This paper shows how 32 GB 2RX4 LRDIMMs transcend similar RDIMMs to meet the needs of today’s data center enterprise servers, by providing an optimal combination of deeper memory and higher data bandwidth, even at mainstream module densities.
Related Resources
新闻和博客
SMART Modular选择IDT作为其DDR4 NVDIMM技术的首选合作伙伴 | 新闻 | 2015年10月23日 |