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概览

描述

The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog switches are monolithic devices fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. They are pinout compatible and functionally equivalent to the HS-303RH, but offer improved 300kRAD(Si) total dose capability. These switches offer low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant over the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303ARH and HS-303AEH should be operated with nominal ±15V supplies, while the HS-303BRH and HS-303BEH should be operated with nominal ±12V supplies.

特性

  • Electrically screened to DLA SMD# 5962-95813
  • QML, per MIL-PRF-38535
  • Radiation performance
    • Total dose: 3x105rad(Si)
    • SEE: For LET = 60MeV•cm2/mg at 60° incident angle, <150pC charge transferred to the output of an off switch (based on SOI design calculations)
  • No latch-up, dielectrically isolated device islands
  • Pinout and functionally compatible with Renesas HS-303RH and HI-303 series analog switches
  • Analog signal range equal to the supply voltage range
  • Low leakage: 100nA (max, post-rad)
  • Low rON: 70Ω (max, post-rad)
  • Low standby supply current: +150μA/-100μA (max, post-rad)

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应用

文档

类型 文档标题 日期
数据手册 PDF 570 KB
宣传手册 PDF 467 KB
产品咨询 PDF 223 KB
技术摘要 PDF 115 KB
涨价通告 PDF 360 KB
其他
报告 PDF 304 KB
应用说明 PDF 338 KB
应用说明 PDF 224 KB
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设计和开发

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ECAD 模块

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