概览

简介

NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

特性

  • Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A)
  • Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON dual

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 476 KB
应用文档 PDF 3.23 MB 日文
指南 PDF 1.71 MB
Product Reliability Report PDF 222 KB
手册 PDF 2.24 MB
5 items

设计和开发

开发板与套件

开发板与套件

模型