概览
描述
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
特性
- Logic level operation (4 to 6 V Gate drive)
- High endurance capability against to the short circuit
- Built-in the over temperature shut-down circuit
- Latch type shut-down operation (Need 0 voltage recovery)
产品对比
应用
设计和开发
模型
ECAD 模块
点击产品选项表中的产品,查找 SamacSys 中的原理图符号、PCB 足迹和 3D CAD 模型。点击产品选项表中的产品,查找 SamacSys 中的原理图符号、PCB 足迹和 3D CAD 模型。

产品选项
当前筛选条件