概览

简介

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

特性

  • High endurance capability against to the short circuit.
  • Built-in the over temperature shut-down circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • Low on-resistance RDS: 22 mΩ Typ, 27 mΩ Max (VGS = –10 V)
  • AEC-Q101 Compliant

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 85 KB 日文
手册 PDF 9.16 MB
应用文档 PDF 3.23 MB 日文
应用文档 PDF 648 KB 日文
产品变更通告 PDF 4.86 MB 日文
手册 PDF 2.24 MB
产品变更通告 PDF 3.74 MB 日文
产品变更通告 PDF 1.46 MB 日文
手册 PDF 11.56 MB
应用文档 PDF 2.71 MB
手册 PDF 1.32 MB
11 items

设计和开发

模型