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概览
描述
The F0424 is a 600MHz to 5000MHz SiGe high-gain broadband RF amplifier. The combination of low noise figure (NF) and high linearity performance allows the device to be used in both receiver and transmitter applications.
The F0424 is designed to operate with a single 5V or 3.3V power supply using a nominal 70mA of ICC. With a supply voltage of 5V, the F0424 provides 17.3dB gain with +40dBm OIP3 and 2.3dB noise figure at 2600MHz.
This device is packaged in a 2 × 2 mm, 8-DFN with 50Ω single-ended RF input and output impedances for ease of integration into the signal-path.
特性
- RF range: 600MHz to 5000MHz
- Noise figure = 2.3dB at 2600MHz
- Gain = 17.3dB at 2600MHz
- OIP3 = +40dBm at 2600MHz
- Output P1dB = +21dBm at 2600MHz
- Near-constant gain versus temperature
- 3.3V or 5V power supply
- ICC = 70mA
- 2mA standby current
- 350mW typical DC power at 5V supply
- 50Ω input and output impedances
- Operating temperature (TEP) range: -40°C to +105°C
- 2 × 2 mm, 8-DFN package
应用
设计和开发
开发板与套件
开发板与套件
Evaluation Board for F0424 Broadband RF Amplifier 600MHz to 4200MHz
The F0424EVBK is a fully populated evaluation board which allows the customer to easily evaluate the F0424 broadband RF amplifier.
特色文件:
模块
ECAD 模块
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
产品选择
Processing table
| DFN | 8 | K | Yes | Cut Tape | 获取样片, | |
| DFN | 8 | K | Yes | Reel |
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IDT RF Product Benefits Overview
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
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