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扩展 ECAD 模块
概览
描述
The F2251 is a low insertion loss Voltage Variable RF Attenuator (VVA) designed for a multitude of wireless and RF applications. The device covers a broad frequency range from 50MHz to 6000MHz. In addition to providing low insertion loss, the F2251 provides excellent linearity performance over its entire voltage control and attenuation range.
The F2251 uses a single positive supply voltage of 3.15V to 5.25V. Other features include an enhancement to the Phase Noise performance of the device compared to its predecessor (F2250). The device also features a positive attenuation slope only.
特性
- Frequency range: 50MHz to 6000MHz
- Low insertion loss: 1.4dB at 2000MHz
- Typical/Minimum IIP3: 67dBm / 47dBm
- Typical/Minimum IIP2: 105dBm / 95dBm
- 33.6dB attenuation range
- Bi-directional RF ports
- +34.4dBm Input P1dB compression
- Enhanced phase noise performance
- Linear-in-dB attenuation characteristic
- Supply voltage: 3.15V to 5.25V
- VCTRL range: 0V to 3.6V using 5V supply
- +105°C maximum operating temperature
- 3 × 3 mm 16-VFQFPN package
设计和开发
开发板与套件
开发板与套件
Evaluation Board for the F2251 Voltage Variable RF Attenuator
The F2251 Evaluation Board is a fully populated evaluation board specifically designed to evaluate the F2251 Voltage Variable RF Attenuator.ΩΩ
特色文件:
模块
ECAD 模块
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
产品选择
Processing table
| VFQFPN | 16 | I | Yes | Tray | 获取样片, | |
| VFQFPN | 16 | I | Yes | Reel |
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- Cart icon to the right of the chip icon: Indicates that samples are available for this product
play_circle_filled视频和培训
IDT RF Product Benefits Overview
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
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