RBN220N75A5JWS

Renesas' AE5 IGBTs for automotive applications use a unique trench gate configuration in their process structure.

• The lowest conduction loss on the market
• Achieve low saturation voltage, low switching loss, and chip shrink without sacrificing robustness
• Easier parallel operation by suppressing Vth variation
• Achieve Tjmax 185degC from 175degC (AE4), resulting in more stable performance in high temperature area

This 750V/220A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.