概览
描述
Renesas' AE4 IGBTs for automotive applications use a unique trench gate configuration in its process structure. These devices achieve low saturation voltage without sacrificing robustness and also have low switching losses. This 1200V/150A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.
特性
- 1200V Trench & field stop AE4 technology
- Low collector to emitter saturation voltage (1.5V typ.)
- Low Switching loss
- Easy paralleling by internal Rg
- AEC Q101 (HTRB, HTGB) qualified
产品对比
应用
- Hybrid and electric vehicle inverter
设计和开发
模型
ECAD 模块
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