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概览

描述

The TP65H150G4LSGBE 650V 150mΩ Gallium Nitride (GaN) FET, housed in an 8x8 PQFN industry-standard package, is a normally-off device built on Renesas' Gen IV SuperGaN® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, delivering exceptional performance, standard drive compatibility, ease of adoption, and enhanced reliability.

特性

  • 150mOhm, 650V GaN Device in PQFN 8x8 industry package
  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design defined by:
    • 800V transient over-voltage capability
    • Operation with E-mode Gate drivers without the need for Zener protection
  • Low QRR
  • Reduced crossover loss
  • Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
    • Increased power density
    • Reduced system size and weight
    • Overall reduction in system cost

产品对比

应用

  • Consumer
  • Power adapters
  • Low power SMPS
  • Lighting
  • POE Power

文档

设计和开发

软件与工具

模型

ECAD 模块

点击产品选项表中的产品,查找 SamacSys 中的原理图符号、PCB 足迹和 3D CAD 模型。点击产品选项表中的产品,查找 SamacSys 中的原理图符号、PCB 足迹和 3D CAD 模型。
 

Diagram of ECAD Models

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