Our GaN power discretes offer improved efficiency over silicon through lower gate charge, lower crossover loss and smaller reverse recovery charge. Leading the GaN Revolution, Renesas has the highest performance, highest reliability GaN devices for high voltage power conversion applications. We have the industry's only JEDEC- and AEC-Q101-qualified GaN FETs and can achieve over 99% efficiency, 40% more power density and 20% lower system cost.
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Gallium Nitride (GaN) Delivers Unmatched Performance and Reliability
Renesas now offers the highest performance and reliability Gallium Nitride (GaN) solutions with the help of Transphorm. Discover how our GaN technology can enhance your next-generation system designs.
To learn more, visit the GaN Power Discretes category page.
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