瑞萨电子 (Renesas Electronics Corporation)
搜索

NP80N06PLG

有效

Power MOSFETs for Automotive

立即订购
NP80N06MLG, NP80N06NLG, NP80N06PLG Data Sheet

概览

Support is limited to customers who have already adopted these products.

The NP80N06MLG, NP80N06NLG, and NP80N06PLG are N-channel MOS Field Effect Transistors designed for high current switching applications.

  • Logic level
  • Built-in gate protection diode
  • Super low on-state resistance NP80N06MLG, NP80N06NLG RDS(on)1 = 8.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) NP80N06PLG RDS(on)1 = 8.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
  • High current rating ID(DC) = ±80 A
  • Low input capacitance Ciss = 4600 pF TYP.
  • Designed for automotive application and AEC-Q101 qualified

文档

相关文档
类型 文档标题 日期
数据手册
NP80N06MLG, NP80N06NLG, NP80N06PLG Data Sheet
PDF 347 KB
指南
Power Discrete Mount Pad
PDF 796 KB
应用说明
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
宣传手册
Power MOSFET & IPD
PDF 2.24 MB
4 items

设计和开发

ECAD 模块

点击产品选项表中的 CAD 模型链接，查找 SamacSys 中的原理图符号、PCB 焊盘布局和 3D CAD 模型。如果符号和模型不可用，可直接在 SamacSys 请求该符号或模型。

扩展 ECAD 模块
Diagram of ECAD Models

产品选项

当前筛选条件