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概览

描述

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

特性

  • Channel temperature 175 degree rated
  • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
  • Low input capacitance Ciss = 4400 pF TYP.
  • Built-in gate protection diode

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 425 KB
指南 PDF 796 KB
应用说明 PDF 648 KB 日本語
宣传手册 PDF 2.24 MB
4 items

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