概览
描述
This FET has overtemperature shut-down capability sensing for junction temperature. This FET also has a built-in overtemperature shut-down circuit in the gate area, and circuit operation to shut down the gate voltage in case of high junction temperature caused by excessive power consumption, overcurrent, etc.
特性
- Built-in overtemperature shut-down circuit and current limitation circuit
- High endurance capability against short circuit
- Latch type shut-down operation (need 0 voltage recovery)
- Built-in current limitation circuit
- Low on-resistance RDS(on): 140 mΩ Typ, 260 mΩ Max (VGS = –10 V)
- Power supply voltage applies 12V
- AEC-Q101 Rev-C compliant
产品对比
应用
设计和开发
模型
ECAD 模块
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