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概览

描述

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..

特性

  • Logic level operation.
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • Power supply voltage applies 12 V.
  • AEC-Q101 Compliant.
  • Endurance capability against to ESD.

产品对比

应用

文档

设计和开发

模型

ECAD 模块

点击产品选项表中的 CAD 模型链接,查找 SamacSys 中的原理图符号、PCB 焊盘布局和 3D CAD 模型。如果符号和模型不可用,可直接在 SamacSys 请求该符号或模型。

Diagram of ECAD Models

模型

类型 文档标题 日期
模型 - SPICE LIB 2 KB
1 item

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