100V, 3A Source, 4A Sink, High-Frequency Half-Bridge NMOS FET Drivers
The HIP2210EVAL1Z evaluation board is designed to provide a quick and comprehensive method for evaluating the HIP2210 100V, 3A source, 4A sink, high frequency...
The HIP2210 is a 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver. The HIP2210 features a tri-level PWM input with programmable dead time. Its wide operating supply range of 6V to 18V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.
This driver features strong 3A source, 4A sink drivers with very fast 15ns typical propagation delay and 2ns typical delay matching, making it optimal for high-frequency switching applications. VDD and boot UVLO protects against an undervoltage operation.
The tri-level input of the HIP2210 PWM pin controls the high-side and low-side drivers with a single pin. When the PWM input is at logic high, the high-side bridge FET is turned on and the low-side FET is off. When the input is at logic low, the low-side bridge FET is turned on and the high-side FET is turned off. When the input voltage is in the mid-level state, both the high-side and low-side bridge FETs are turned off. The PWM threshold levels are proportional to an external input reference voltage on the VREF pin, allowing PWM operation across a 2.7V to 5.5V logic range.
The HIP2210 is offered in a 10 Ld 4x4mm TDFN package.
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类型 | 文档标题 | 日期 |
数据手册 | PDF 593 KB | |
宣传手册 | PDF 12.71 MB 日本語 | |
产品变更通告 | PDF 156 KB | |
手册 - 开发工具 | PDF 1.05 MB | |
白皮书 | PDF 295 KB | |
应用笔记 | PDF 576 KB | |
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iSim:PE 离线模拟工具 iSim Personal Edition(iSim:PE )可加快设计周期并降低项目早期风险,确定可用于当前和下一代设计的部件。
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Simulator | 瑞萨电子 |
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The HIP2210EVAL1Z evaluation board is designed to provide a quick and comprehensive method for evaluating the HIP2210 100V, 3A source, 4A sink, high frequency...
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