概览
Renesas' half-bridge (h-bridge) drivers handle voltages up to 100V, with industry-leading gate rise and fall times and exceptional input-to-output propagation delay performance.
High Power Density & Efficiency
Provides high sink/source current capability and fast switching via low propagation delay, enabling efficient power delivery in a compact package.
Design Flexibility
Supports independent high‑side/low‑side control or PWM input, providing versatile drive options for Si and GaN MOSFET‑based power stages.
Bulit-In Protection
Integrated UVLO, anti‑shoot‑through, and thermal protection features ensure robust, reliable operation in demanding power environments.
