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概览

描述

The HS-302AEH is a dual Double-Pole, Single-Throw (DPST) analog switch fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. The HS-302AEH is pin compatible and functionally equivalent to the HS-302RH. The HS-302AEH offers convenient switching controlled by 5V digital inputs and low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant across the full range of operating voltage and current and as over exposure to radiation. The HS-302AEH is available in a 14 Ld CDFP or die form and operates across the extended temperature range of -55°C to +125°C.

特性

  • Electrically screened to DLA SMD# 5962-95812
  • No latch-up, dielectrically isolated device islands
  • Pin and functionally compatible with Renesas HS-302RH series analog switches
  • Analog signal range equal to the supply voltage range
  • Low leakage: 150nA (maximum, post-rad)
  • Low rON: 60Ω (maximum, post-rad)
  • Low standby supply current: ±150μA (maximum, post-rad)
  • Radiation assurance
    • High dose rate (50 to 300rad(Si)/s): 100krad(Si)
    • Low dose rate (0.01rad(Si)/s): 50krad(Si) (Note 1)
  • SEE for LET = 60MeV•cm2/mg at 60° incident angle, <150pC charge transferred to the output of an off switch (based on SOI design calculations)

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应用

文档

类型 文档标题 日期
数据手册 PDF 814 KB
宣传手册 PDF 467 KB
产品咨询 PDF 154 KB
技术摘要 PDF 115 KB
涨价通告 PDF 360 KB
其他
应用说明 PDF 338 KB
应用说明 PDF 224 KB
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设计和开发

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