概览
描述
The HS-302AEH is a dual Double-Pole, Single-Throw (DPST) analog switch fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. The HS-302AEH is pin compatible and functionally equivalent to the HS-302RH. The HS-302AEH offers convenient switching controlled by 5V digital inputs and low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant across the full range of operating voltage and current and as over exposure to radiation. The HS-302AEH is available in a 14 Ld CDFP or die form and operates across the extended temperature range of -55°C to +125°C.
特性
- Electrically screened to DLA SMD# 5962-95812
- No latch-up, dielectrically isolated device islands
- Pin and functionally compatible with Renesas HS-302RH series analog switches
- Analog signal range equal to the supply voltage range
- Low leakage: 150nA (maximum, post-rad)
- Low rON: 60Ω (maximum, post-rad)
- Low standby supply current: ±150μA (maximum, post-rad)
- Radiation assurance
- High dose rate (50 to 300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s): 50krad(Si) (Note 1)
- SEE for LET = 60MeV•cm2/mg at 60° incident angle, <150pC charge transferred to the output of an off switch (based on SOI design calculations)
产品对比
应用
- Signal processing applications
- Power supply control
文档
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类型 | 文档标题 | 日期 |
数据手册 | PDF 814 KB | |
宣传手册 | PDF 467 KB | |
产品咨询 | PDF 154 KB | |
技术摘要 | PDF 115 KB | |
涨价通告 | PDF 360 KB | |
其他 | ||
应用笔记 | PDF 338 KB | |
应用笔记 | PDF 224 KB | |
8 items
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设计和开发
模型
ECAD 模块
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