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概览

描述

The ISL72813SEH is a radiation hardened, high-voltage, high-current, driver circuit fabricated using the Renesas proprietary PR40 Silicon-on-Insulator (SOI) process technology to mitigate single-event effects. This device integrates 32 driver circuits that feature high-voltage, common emitter, and open-collector outputs with a 42V breakdown voltage and a peak current rating of 600mA. To further reduce solution size and increase system power density, the ISL72813SEH integrates a 5-bit to 32-channel decoder (plus enable pin) as well as level shifting circuitry to reference the output of the decoder to a negative voltage. This conveniently allows the user to select 1 of 32 available driver channels. The inputs to the decoder are TTL/CMOS compatible, allowing easy interface to CPUs, FPGAs or microprocessors. The ISL72813SEH operates across the military temperature range from -55 °C to +125 °C and is available in a 44 Ld hermetically sealed Ceramic Lead-Less Chip Carrier (CLCC) package.

特性

  • Electrically screened to SMD 5962-17208
  • Acceptance tested to 100krad(Si) (HDR) and to 50krad(Si) (LDR) wafer-by-wafer
  • Integrated 5-bit to 32-channel decoder
  • Integrated level shifting circuit
  • High collector current outputs
  • High voltage outputs
  • Grounded metal lid
  • Full military temperature range operation
  • TA = -55 °C to +125 °C
  • TJ = -55 °C to +150 °C
  • Radiation tolerance
  • HDR (50rad(Si)/s to 300rad(Si)/s): 100krad(Si)
  • LDR (0.01rad(Si)/s): 50krad(Si)
  • SEE hardness
  • No SEB/SEL LETTH, VCE = 33V: 86.4MeV•cm2/mg

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 645 KB
宣传手册 PDF 467 KB
报告 PDF 278 KB
其他
白皮书 PDF 352 KB
产品变更通告 PDF 846 KB
报告 PDF 593 KB
报告 PDF 546 KB
应用笔记 PDF 224 KB
9 items

设计和开发

开发板与套件

模型

ECAD 模块

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