概览

简介

The RMLV1616A-U Series is a family of 16-Mbit asynchronous SRAMs organized 1,048,576-word × 16-bit.

The RMLV1616A-U Series has realized higher soft error immunity compared to typical SRAMs with on-chip ECC, archived by Renesas’s unique Advanced LPSRAM technologies. Therefore, it is suitable for battery backup systems.

It is offered in 48pin TSOP (I) or 48-ball fine pitch ball grid array.

特性

  • Ultra-low standby current consumption:
    - ~25°C: 0.5μA (typ.)/3μA (max.)
    - ~85°C: 4.5μA (typ.)/8μA (max.)
  • High speed access time: 45ns/55ns (max.)
  • Higher soft error immunity (< 0.04 FIT/Mb)*1 compared to typical SRAMs with on-chip ECC
  • Single 3V supply: 2.7V to 3.6V
  • Organized 1,048,576-word × 16-bit (48pin TSOP (I) also configurable as 2,097,152-word × 8bit)
  • Easy memory expansion by CS1# and CS2
  • No clocks, No refresh
  • Common data input and output
    - Three state output
  • Directly TTL compatible
    - All inputs and outputs
  • Battery backup operation
  • Available in Pb-free and RoHS applicable package

Note *1. Based on an accelerated test that complies with JEDEC standard JESD89A. Contact us for details.

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 331 KB 日文
指南 PDF 2.00 MB 日文
指南 PDF 182 KB 日文
指南 PDF 471 KB 日文
Product Reliability Report PDF 197 KB
指南 PDF 1.27 MB 日文
Package Outline Drawing PDF 60 KB
手册 PDF 3.28 MB
8 items

设计和开发

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