DDR II / II+ (Double Data Rate) SRAMs and QDR™ II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next-generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full-cycle utilization.

DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read cycles, thus the data is written or read twice every clock cycle. This provides for a significantly higher transfer rate than standard synchronous SRAM devices. In applications that require continuous read/write capability such as in look-up tables for network switches and routers, DDR SRAMs are an ideal solution.

QDR SRAMs can provide quad data rate (QDR) operation on each data pin through independently operated read and write ports and can transfer four words of data on one clock cycle. This allows for bus contention to be virtually eliminated between the memory controller and the SRAM. The QDR SRAMs can support high-end network switches, routers, and other communication solutions.

Key Applications:

  • Look up table for deep packet processing for QoS and ACL (Access Control List)
  • Packet forwarding queuing, and buffering for high-speed network switches and routers
  • Communications infrastructure equipment such as basestations and switches
  • Cache memory for high-end workstations and servers.

See IBIS models and BSDL models

储存器和逻辑器件

产品选型表

    Processing table
    器件号
    Architecture
    Density (Kb)
    Data Width (bits)
    Burst Length (Words)
    Read Latency (Clock)
    MIN Frequency (MHz)
    Frequency (Max) (MHz)
    R1Q2A4418RBG-40I
    144-Mbit QDR™ II SRAM 2-word Burst
    		 QDR-II 144000 18000 2 1.5 120 250
    R1Q2A7209ABB-40I
    72-Mbit QDR™II SRAM 2-word Burst
    		 QDR-II 72000 9 2 1.5 120 250
    R1Q2A7218ABB-40I
    72-Mbit QDR™II SRAM　2-word Burst
    		 QDR-II 72000 18000 2 1.5 120 250
    R1Q2A7236ABB-40I
    72-Mbit QDR™II SRAM　2-word Burst
    		 QDR-II 72000 36000 2 1.5 120 250
    R1Q3A4436RBG-33I
    144-Mbit QDR™ II SRAM 4-word Burst
    		 QDR-II 144000 36000 4 1.5 120 300
    R1Q3A7236ABB-33I
    72-Mbit QDR™II SRAM 4-word Burst
    		 QDR-II 72000 36000 4 1.5 180 300
    R1Q4A4418RBG-33I
    144-Mbit DDR II SRAM 2-word Burst
    		 DDR-II CIO 144000 18000 2 1.5 120 300
    R1Q4A4436RBG-33I
    144-Mbit DDR II SRAM 2-word Burst
    		 DDR-II CIO 144000 36000 2 1.5 120 300
    R1QAA4418RBG-18I
    144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency)
    		 QDR-II+ without ODT 144000 18000 4 2.5 250 550
    R1QDA4418RBG-18I
    144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 QDR-II+ with ODT 144000 18000 4 2.5 250 550
    R1QDA4418RBG-19I
    144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 QDR-II+ with ODT 144000 18000 4 2.5 250 533
    R1QDA4436RBG-18I
    144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 QDR-II+ with ODT 144000 36000 4 2.5 250 550
    R1QDA4436RBG-19I
    144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 QDR-II+ with ODT 144000 36000 4 2.5 250 533
    R1QDA7218ABB-19I
    72-Mbit QDR™II+ SRAM 4-word Burst
    		 QDR-II+ with ODT 72000 18000 4 2.5 250 533
    R1QDA7218ABB-20I
    72-Mbit QDR™II+ SRAM 4-word Burst
    		 QDR-II+ with ODT 72000 18000 4 2.5 250 500
    R1QDA7236ABB-19I
    72-Mbit QDR™II+ SRAM 4-word Burst
    		 QDR-II+ with ODT 72000 36000 4 2.5 250 533
    R1QDA7236ABB-20I
    72-Mbit QDR™II+ SRAM 4-word Burst
    		 QDR-II+ with ODT 72000 36000 4 2.5 250 500
    R1QEA4436RBG-19I
    144-Mbit DDR™II+ SRAM 2-word Burst Architecture ( 2.5 Cycle Read latency ) with ODT
    		 DDR-II+ CIO with ODT 144000 36000 2 2.5 250 533
    R1QEA7218ABB-19I
    72-Mbit DDRII+ SRAM 2-word Burst
    		 DDR-II+ CIO with ODT 72000 18000 2 2.5 250 533
    R1QEA7218ABB-20I
    72-Mbit DDRII+ SRAM 2-word Burst
    		 DDR-II+ CIO with ODT 72000 18000 2 2.5 250 500
    R1QEA7236ABB-19I
    72-Mbit DDRII+ SRAM 2-word Burst
    		 DDR-II+ CIO with ODT 72000 36000 2 2.5 250 533
    R1QEA7236ABB-20I
    72-Mbit DDRII+ SRAM 2-word Burst
    		 DDR-II+ CIO with ODT 72000 36000 2 2.5 250 500
    RMQC4A1818DGBA-302
    18-Mbit DDR™ II SRAM 2-word Burst
    		 DDR-II CIO 18000 18000 2 1.5 120 333
    RMQC4A1836DGBA-302
    18-Mbit DDR™ II SRAM 2-word Burst
    		 DDR-II CIO 18000 36000 2 1.5 120 333
    RMQC4A3618DGBA-302
    36-Mbit DDR™ II SRAM 2-word Burst
    		 DDR-II CIO 36000 18000 2 1.5 120 333
    RMQC4A3636DGBA-302
    36-Mbit DDR™ II SRAM 2-word Burst
    		 DDR-II CIO 36000 36000 2 1.5 120 333
    RMQCEA3618DGBA-182
    36-Mbit DDR™ II+ SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 DDR-II+ CIO with ODT 36000 18000 2 2.5 250 550
    RMQCEA3636DGBA-182
    36-Mbit DDR™ II+ SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 DDR-II+ CIO with ODT 36000 36000 2 2.5 250 550
    RMQCHA3618DGBA-222
    36-Mbit DDR™ II+ SRAM 2-word Burst Architecture (2.0 Cycle Read latency)
    		 DDR-II+ CIO without ODT 36000 18000 2 2 250 450
    RMQCHA3636DGBA-222
    36-Mbit DDR™ II+ SRAM 2-word Burst Architecture (2.0 Cycle Read latency)
    		 DDR-II+ CIO without ODT 36000 36000 2 2 250 450
    RMQS2A1818DGBA-332
    18-Mbit QDR™ II SRAM 2-word Burst
    		 QDR-II 18000 18000 2 1.5 120 300
    RMQS2A1836DGBA-332
    18-Mbit QDR™ II SRAM 2-word Burst
    		 QDR-II 18000 36000 2 1.5 120 300
    RMQS2A3618DGBA-332
    36-Mbit QDR™ II SRAM 2-word Burst
    		 QDR-II 36000 18000 2 1.5 120 300
    RMQS2A3636DGBA-332
    36-Mbit QDR™ II SRAM　2-word Burst
    		 QDR-II 36000 36000 2 1.5 120 300
    RMQS3A1836DGBA-302
    18-Mbit QDR™ II SRAM 4-word Burst
    		 QDR-II 18000 36000 4 1.5 120 333
    RMQS3A3618DGBA-302
    36-Mbit QDR™ II SRAM 4-word Burst
    		 QDR-II 36000 18000 4 1.5 120 333
    RMQS3A3636DGBA-302
    36-Mbit QDR™ II SRAM 4-word Burst
    		 QDR-II 36000 36000 4 1.5 120 333
    RMQSDA3618DGBA-182
    36-Mbit QDR™ II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 QDR-II+ with ODT 36000 18000 4 2.5 250 550
    RMQSDA3636DGBA-182
    36-Mbit QDR™ II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 QDR-II+ with ODT 36000 36000 4 2.5 250 550
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    文档

    文档标题 类型 日期
    Network Packet Search Solution Catalog
    PDF1.79 MB
    手册

    Tools & Resources

    SRAM FAQs