储存器和逻辑器件

DDR II / II+（双倍数据速率）SRAM 和 QDR™ II / II+（四倍数据速率）SRAM 是下一代网络和通信系统的理想存储设备。 此款超快设备可支持高带宽系统，这类系统要求存储器具有极高的工作频率、较低的延迟性和全周期利用率。

DDR SRAM 可在写入或读取周期内对每个数据引脚进行双倍数据速率 (DDR) 操作，因此每个时钟周期可写入或读取两次数据。 因此，其传输速率大大高于标准同步 SRAM 器件。 在需要连续读/写能力的应用场合（如网络交换机和路由器的查找表等），DDR SRAM 是理想的解决方案。

QDR SRAM 可通过独立操作的读写端口对每个数据引脚进行四倍数据速率 (QDR) 操作，并可在一个时钟周期内传输四个字的数据。 这几乎消除了存储器控制器和 SRAM 之间的总线争用问题。 QDR SRAM 可支持高端网络交换机、路由器和其他通信解决方案。

关键应用：

  • QoS 和 ACL 的深度数据包处理查找表（访问控制列表）
  • 高速网络交换机和路由器的数据包转发队列和缓冲
  • 通信基础设施设备，如基站和交换机等
  • 用于高端工作站和服务器的高速缓存存储器。

查看 IBIS 模型和 BSDL 模型

产品选型表

    Processing table
    Architecture
    Density (Kb)
    Data Width (bits)
    Burst Length (Words)
    Read Latency (Clock)
    MIN Frequency (MHz)
    Frequency (Max) (MHz)
    器件号
    R1Q2A4418RBG-40I
    144-Mbit QDR™ II SRAM 2-word Burst
    		 QDR-II 144000 18000 2 1.5 120 250
    R1Q2A7209ABB-40I
    72-Mbit QDR™II SRAM 2-word Burst
    		 QDR-II 72000 9 2 1.5 120 250
    R1Q2A7218ABB-40I
    72-Mbit QDR™II SRAM　2-word Burst
    		 QDR-II 72000 18000 2 1.5 120 250
    R1Q2A7236ABB-40I
    72-Mbit QDR™II SRAM　2-word Burst
    		 QDR-II 72000 36000 2 1.5 120 250
    R1Q3A4436RBG-33I
    144-Mbit QDR™ II SRAM 4-word Burst
    		 QDR-II 144000 36000 4 1.5 120 300
    R1Q3A7236ABB-33I
    72-Mbit QDR™II SRAM 4-word Burst
    		 QDR-II 72000 36000 4 1.5 180 300
    R1Q4A4418RBG-33I
    144-Mbit DDR II SRAM 2-word Burst
    		 DDR-II CIO 144000 18000 2 1.5 120 300
    R1Q4A4436RBG-33I
    144-Mbit DDR II SRAM 2-word Burst
    		 DDR-II CIO 144000 36000 2 1.5 120 300
    R1QAA4418RBG-18I
    144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency)
    		 QDR-II+ without ODT 144000 18000 4 2.5 250 550
    R1QDA4418RBG-18I
    144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 QDR-II+ with ODT 144000 18000 4 2.5 250 550
    R1QDA4418RBG-19I
    144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 QDR-II+ with ODT 144000 18000 4 2.5 250 533
    R1QDA4436RBG-18I
    144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 QDR-II+ with ODT 144000 36000 4 2.5 250 550
    R1QDA4436RBG-19I
    144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 QDR-II+ with ODT 144000 36000 4 2.5 250 533
    R1QDA7218ABB-19I
    72-Mbit QDR™II+ SRAM 4-word Burst
    		 QDR-II+ with ODT 72000 18000 4 2.5 250 533
    R1QDA7218ABB-20I
    72-Mbit QDR™II+ SRAM 4-word Burst
    		 QDR-II+ with ODT 72000 18000 4 2.5 250 500
    R1QDA7236ABB-19I
    72-Mbit QDR™II+ SRAM 4-word Burst
    		 QDR-II+ with ODT 72000 36000 4 2.5 250 533
    R1QDA7236ABB-20I
    72-Mbit QDR™II+ SRAM 4-word Burst
    		 QDR-II+ with ODT 72000 36000 4 2.5 250 500
    R1QEA4436RBG-19I
    144-Mbit DDR™II+ SRAM 2-word Burst Architecture ( 2.5 Cycle Read latency ) with ODT
    		 DDR-II+ CIO with ODT 144000 36000 2 2.5 250 533
    R1QEA7218ABB-19I
    72-Mbit DDRII+ SRAM 2-word Burst
    		 DDR-II+ CIO with ODT 72000 18000 2 2.5 250 533
    R1QEA7218ABB-20I
    72-Mbit DDRII+ SRAM 2-word Burst
    		 DDR-II+ CIO with ODT 72000 18000 2 2.5 250 500
    R1QEA7236ABB-19I
    72-Mbit DDRII+ SRAM 2-word Burst
    		 DDR-II+ CIO with ODT 72000 36000 2 2.5 250 533
    R1QEA7236ABB-20I
    72-Mbit DDRII+ SRAM 2-word Burst
    		 DDR-II+ CIO with ODT 72000 36000 2 2.5 250 500
    RMQC4A1818DGBA-302
    18-Mbit DDR™ II SRAM 2-word Burst
    		 DDR-II CIO 18000 18000 2 1.5 120 333
    RMQC4A1836DGBA-302
    18-Mbit DDR™ II SRAM 2-word Burst
    		 DDR-II CIO 18000 36000 2 1.5 120 333
    RMQC4A3618DGBA-302
    36-Mbit DDR™ II SRAM 2-word Burst
    		 DDR-II CIO 36000 18000 2 1.5 120 333
    RMQC4A3636DGBA-302
    36-Mbit DDR™ II SRAM 2-word Burst
    		 DDR-II CIO 36000 36000 2 1.5 120 333
    RMQCEA3618DGBA-182
    36-Mbit DDR™ II+ SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 DDR-II+ CIO with ODT 36000 18000 2 2.5 250 550
    RMQCEA3636DGBA-182
    36-Mbit DDR™ II+ SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 DDR-II+ CIO with ODT 36000 36000 2 2.5 250 550
    RMQCHA3618DGBA-222
    36-Mbit DDR™ II+ SRAM 2-word Burst Architecture (2.0 Cycle Read latency)
    		 DDR-II+ CIO without ODT 36000 18000 2 2 250 450
    RMQCHA3636DGBA-222
    36-Mbit DDR™ II+ SRAM 2-word Burst Architecture (2.0 Cycle Read latency)
    		 DDR-II+ CIO without ODT 36000 36000 2 2 250 450
    RMQS2A1818DGBA-332
    18-Mbit QDR™ II SRAM 2-word Burst
    		 QDR-II 18000 18000 2 1.5 120 300
    RMQS2A1836DGBA-332
    18-Mbit QDR™ II SRAM 2-word Burst
    		 QDR-II 18000 36000 2 1.5 120 300
    RMQS2A3618DGBA-332
    36-Mbit QDR™ II SRAM 2-word Burst
    		 QDR-II 36000 18000 2 1.5 120 300
    RMQS2A3636DGBA-332
    36-Mbit QDR™ II SRAM　2-word Burst
    		 QDR-II 36000 36000 2 1.5 120 300
    RMQS3A1836DGBA-302
    18-Mbit QDR™ II SRAM 4-word Burst
    		 QDR-II 18000 36000 4 1.5 120 333
    RMQS3A3618DGBA-302
    36-Mbit QDR™ II SRAM 4-word Burst
    		 QDR-II 36000 18000 4 1.5 120 333
    RMQS3A3636DGBA-302
    36-Mbit QDR™ II SRAM 4-word Burst
    		 QDR-II 36000 36000 4 1.5 120 333
    RMQSDA3618DGBA-182
    36-Mbit QDR™ II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 QDR-II+ with ODT 36000 18000 4 2.5 250 550
    RMQSDA3636DGBA-182
    36-Mbit QDR™ II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
    		 QDR-II+ with ODT 36000 36000 4 2.5 250 550
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    文档

    文档标题
    		类型 日期
    Network Packet Search Solution Catalog
    PDF 1.79 MB     		手册
    1 item

    工具集资源

    SRAM FAQs