图像

Renesas' ultra-high frequency transistor arrays each consist of five dielectrically isolated transistors on a common monolithic substrate.
Channels (#) |
NPN or PNP |
V (BR) CBO (V) |
V (BR) CEO (V) |
V (BR) EBO (V) |
ICEO (nA) |
ICBO (nA) |
hFE |
NF (dB) |
FT (GHz) |
Offset Voltage (Max) (mV) |
IOS (nA) |
CEB (pF) |
CCB (pF) |
Lead Count (#) |
Pkg. Type |
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
器件号 | ||||||||||||||||
Ultra High Frequency Transistor Arrays | 5 | NPN | 18 | 12 | 6 | 2 | 0.1 | 70 | 3.5 | 5 | 5 | 5000 | 0.5 | 0.5 | 14 | SOICN |
Ultra High Frequency Transistor Arrays | 5 | NPN/PNP | 18 | 12 | 6 | 2 | 0.1 | 70,35 | 3.5 | 8 | 5 | 0.5 | 0.5 | 16 | SOICN | |
Ultra High Frequency Transistor Arrays | 5 | NPN | 18 | 12 | 6 | 2 | 0.1 | 70 | 3.5 | 5 | 5 | 0.5 | 0.5 | 16 | QFN, SOICN |