封装信息
| Lead Count (#) | 5 |
| Pkg. Code | PBM |
| Pitch (mm) | 0.95 |
| Pkg. Type | SOT23 |
| Pkg. Dimensions (mm) | 2.90 x 1.65 x 0.00 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| ECCN (US) | EAR99 |
| HTS (US) | 8542390001 |
| RoHS (HIP1020CKZ-T) | 下载 |
产品属性
| Lead Count (#) | 5 |
| Carrier Type | Reel |
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| Pb Free Category | Pb-Free 100% Matte Tin Plate w/Anneal-e3 |
| Temp. Range | 0 to +70°C |
| Country of Assembly | Malaysia |
| Country of Wafer Fabrication | United States |
| Price (USD) | 1ku | 1.61619 |
| Bias Voltage Range (V) | 5 - 12 |
| Controlled Voltages (V) | ≤ Bias Voltage - ≤ Bias Voltage |
| Internal / External FET | Ext |
| Length (mm) | 2.9 |
| MOQ | 3000 |
| Outputs (#) | 3 |
| Parametric Category | Hot Swap/Hot Plug Controllers |
| Pitch (mm) | 1 |
| Pkg. Dimensions (mm) | 2.9 x 1.7 x 0.00 |
| Pkg. Type | SOT23 |
| Qualification Level | Standard |
| Regulation or Latch-Off for Overcurrent | N/A |
| Reporting | N/A |
| Thickness (mm) | 0 |
| UV/OV Feature | N/A |
| VBIAS (Max) (V) | 12 |
| VBIAS (Min) (V) | 5 |
| Width (mm) | 1.7 |
描述
The HIP1020 applies a linear voltage ramp to the gates of any combination of 3. 3V, 5V, and 12V MOSFETs. The internal charge pump doubles a 12V bias or triples a 5V bias to deliver the high-side drive capability required when using more cost-effective N-Channel MOSFETs. The 5V/ms ramp rate is controlled internally and is the proper value to turn on most devices within the Device-Bay-specified di/dt limit. If a slower rate is required, the internally-determined ramp rate can be over ridden using an optional external capacitor. When VCC = 12V, the charge pump ramps the voltage on HGATE from zero to 22V in about 4ms. This allows either a standard or a logic-level MOSFET to become fully enhanced when used as a high-side switch for 12V power control. The voltage on LGATE ramps from zero to 16V allowing the simultaneous control of 3. 3V and/or 5V MOSFETs. When VCC = 5V, the charge pump enters voltage-tripler mode. The voltage on HGATE ramps from zero to 12. 5V in about 3ms while LGATE ramps to 12. 0V. This mode is ideal for control of high-side MOSFET switches used in 3. 3V and 5V power switching when 12V bias is not available.