封装信息
| Pkg. Type | DIE |
环境和出口类别
| Pb (Lead) Free | No |
| Moisture Sensitivity Level (MSL) | |
| ECCN (US) | |
| HTS (US) |
产品属性
| Pkg. Type | DIE |
| Pb (Lead) Free | No |
| MOQ | 5 |
| Temp. Range | -40 to +125°C |
| CAGE code | 34371 |
| Die Sale Availability? | Yes |
| Flow | RH Hermetic |
| Leakage Current (max, post-rad) (±nA) | 100 |
| PROTO Availability? | Yes |
| Qualification Level | EM |
| RON (max) (ohms) | 70 |
| Rating | Space |
| Supply Current (max, post-rad) | +150µA/-100µA |
| Supply Voltage (max) (V) | 12 - 12 |
| Supply Voltage (min) (V) | -12 - -12 |
| Supply Voltage of Specification Limits (±V) | 12 |
| Switches (#) | 2 |
| TID HDR (krad(Si)) | 300 |
| TID LDR (krad(Si)) | 50 |
| Turn-Off Time (max) (ns) | 450 |
| Turn-On Time (max) (ns) | 500 |
| rON (max, post-rad) (Ω) | 70 |
| tOFF (max, post-rad) (ns) | 450 |
| tON (max, post-rad) (ns) | 500 |
描述
The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog switches are monolithic devices fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. They are pinout compatible and functionally equivalent to the HS-303RH, but offer improved 300kRAD(Si) total dose capability. These switches offer low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant over the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303ARH and HS-303AEH should be operated with nominal ±15V supplies, while the HS-303BRH and HS-303BEH should be operated with nominal ±12V supplies.