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Non-Volatile 8Mb High Performance MRAM, 1.8V

封装信息

CAD 模型:View CAD Model
Pkg. Type:DFN
Pkg. Code:NFT8
Lead Count (#):8
Pkg. Dimensions (mm):6.0 x 5.0 x 0.75
Pitch (mm):1.27

环境和出口类别

RoHS (M10082040054X0IWAY)英语日文
Moisture Sensitivity Level (MSL)3
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

产品属性

I/O Frequency (MHz)54 - 54
Pkg. TypeDFN
Temp. Range (°C)-40 to 85°C
Carrier TypeTray
Density (Kb)8192
I/O TypeSPI
I/O Voltage (V)1.8 - 1.8
InterfaceQSPI
Lead CompliantNo
Lead Count (#)8
Length (mm)6
MOQ225
Moisture Sensitivity Level (MSL)3
Pb (Lead) FreeYes
Pb Free Categorye3 Sn
Pitch (mm)1.27
Pkg. Dimensions (mm)6.0 x 5.0 x 0.75
Price (USD)$17.1572
Qty. per Carrier (#)455
Qty. per Reel (#)0
Tape & ReelNo
Thickness (mm)0.75
Width (mm)5
已发布No

描述

The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.