概览
描述
The 5962-85525 (7164 SRAM) is organized as 8K x 8 and offers a reduced power standby mode. This version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.
特性
- High-speed address/chip select access time – 85ns (max.)
- Low power consumption
- Battery backup operation – 2V data retention voltage
- Produced with advanced CMOS high-performance technology
- Inputs and outputs directly TTL-compatible
- Three-state outputs
- Available in 28-pin 600 mil ceramic DIP package
- Military product compliant to MIL-STD-883, Class B
产品对比
应用
设计和开发
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