概览
描述
The R1LV1616HBG-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit with embedded ECC. R1LV1616HBG-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-ball plastic FBGA for high density surface mounting.
特性
- Single 3.0 V supply: 2.7 V to 3.6 V
- Fast access time: 45/55 ns (max)
- Power dissipation
-Active: 9 mW/MHz (typ)
-Standby: 1.5 μW (typ) - Completely static memory.
-No clock or timing strobe required - Equal access and cycle times
- Common data input and output.
-Three state output - Battery backup operation.
-2 chip selection for battery backup - Temperature range: -40 to +85°C
- Embedded ECC (error checking and correction) for single-bit error correction
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