概览
描述
The R1LV1616HSA-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit with embedded ECC. R1LV1616HSA-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting.
特性
- Single 3.0 V supply: 2.7 V to 3.6 V
- Fast access time: 45/55 ns (max)
- Power dissipation
-Active: 9 mW/MHz (typ)
-Standby: 1.5 μW (typ) - Completely static memory.
-No clock or timing strobe required - Equal access and cycle times
- Common data input and output.
-Three state output - Battery backup operation.
-2 chip selection for battery backup - Temperature range: -40 to +85°C
- Byte function (x8 mode) available by BYTE# & A-1
- Embedded ECC (error checking and correction) for single-bit error correction
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应用
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| 类型 | 文档标题 | 日期 |
| 数据手册 | PDF 394 KB 日本語 | |
| 指南 | PDF 2.00 MB 日本語 | |
| 指南 | PDF 207 KB 日本語 | |
| 指南 | PDF 1.27 MB 日本語 | |
| 封装外形图 | PDF 77 KB | |
| 产品变更通告 | PDF 818 KB 日本語 | |
| 产品变更通告 | PDF 1.26 MB 日本語 | |
| 宣传手册 | PDF 3.28 MB | |
| 技术更新 | PDF 113 KB 日本語 | |
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