概览
描述
The RMLV1616A-U Series is a family of 16-Mbit asynchronous SRAMs organized 1,048,576-word × 16-bit.
The RMLV1616A-U Series has realized higher soft error immunity compared to typical SRAMs with on-chip ECC, archived by Renesas’s unique Advanced LPSRAM technologies. Therefore, it is suitable for battery backup systems.
It is offered in 48pin TSOP (I) or 48-ball fine pitch ball grid array.
特性
- Ultra-low standby current consumption:
- ~25°C: 0.5μA (typ.)/3μA (max.)
- ~85°C: 4.5μA (typ.)/8μA (max.) - High speed access time: 45ns/55ns (max.)
- Higher soft error immunity (< 0.04 FIT/Mb)*1 compared to typical SRAMs with on-chip ECC
- Single 3V supply: 2.7V to 3.6V
- Organized 1,048,576-word × 16-bit (48pin TSOP (I) also configurable as 2,097,152-word × 8bit)
- Easy memory expansion by CS1# and CS2
- No clocks, No refresh
- Common data input and output
- Three state output - Directly TTL compatible
- All inputs and outputs - Battery backup operation
- Available in Pb-free and RoHS applicable package
Note *1. Based on an accelerated test that complies with JEDEC standard JESD89A. Contact us for details.
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| 类型 | 文档标题 | 日期 |
| 数据手册 | PDF 331 KB 日本語 | |
| 指南 | PDF 2.00 MB 日本語 | |
| 产品变更通告 | PDF 736 KB 日本語 | |
| 指南 | PDF 182 KB 日本語 | |
| 产品可靠性报告 | PDF 197 KB | |
| 指南 | PDF 1.27 MB 日本語 | |
| 封装外形图 | PDF 60 KB | |
| 宣传手册 | PDF 3.28 MB | |
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