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271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application

封装信息

CAD 模型: View CAD Model
Pkg. Type:
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

环境和出口类别

RoHS (NX8350TS27-AZ) 英语日文
Moisture Sensitivity Level (MSL)
Pb (Lead) Free Yes
ECCN (US)
HTS (US)

产品属性

Ith (Typical) (mA) 8
Lead Compliant No
MOQ 1
Pb (Lead) Free Yes
Pf / Po (Typical) (mW) 1.6
Remarks λp=1271nm, 1291nm, 1311nm, 1331nm
Tape & Reel No
Target applications STM-64, 40G BASE-LR4
Tstg (Max) (°C) 95
Tstg (Min) (°C) -40
Λp (Typical) for BD (nm) 1311

描述

The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode TOSAs (transmitter optical subassembly) with InGaAs monitor PIN-PD in an LC receptacle type package designed for CFP transceiver.