Product Selector: GaN Power Discretes

	Qualification Level	Vds min (V)	V(TR)DSS max (V)	RDSON (Typ) (mΩ)	RDSON (max) (mΩ)	Vth typ (V)	Id max @ 25°C (A)	Qrr typ (nC)	Qg typ (nC) (nC)	Mounting Type	Pkg. Type	Temp. Range
TP65H015G5WS PDF 采用 TO-247 封装的 650V 15mΩ SuperGaN FET	Standard	650	725	15	18	4	95	430	68	Through Hole	TO-247	-55 to +150°C
TP65H035G4QS PDF 650V 35mΩ SuperGaN FET 封装 TOLL	Standard	650	800	35	41	4	46.5	0	22	Surface Mount	TOLL	-55 to +150°C
TP65H035G4WS PDF 采用 TO-247 封装的 650V 35mΩ SuperGaN FET	Standard	650	800	35	41	4	46.5	150	22	Through Hole	TO-247	-55 to +150°C
TP65H035G4WSQA PDF 符合 AEC-Q101 标准的 650V 35mΩ SuperGaN FET 采用 TO-247 封装	Automotive	650	800	35	41	4	46.5	150	22	Through Hole	TO-247	-55 to +150°C
TP65H035G4YS PDF 采用 TO-247-4 封装的 650V 35mΩ SuperGaN FET	Standard	650	725	15	18	4	95	430	68	Through Hole	TO-247	-55 to +150°C
TP65H050G4BS PDF 采用 TO-263 封装的 650V 50mΩ SuperGaN FET （D2-PAK）	Standard	650	800	50	60	4	34	112	16	Surface Mount	TO-263	-55 to +150°C
TP65H050G4QS PDF 650V 50mΩ SuperGaN FET TOLL 封装	Standard	650	800	50	60	4	34	0	16	Surface Mount	TOLL	-55 to +150°C
TP65H050G4WS PDF 采用 TO-247 封装的 650V 50mΩ SuperGaN FET	Standard	650	800	50	60	4	34	112	16	Through Hole	TO-247	-55 to +150°C
TP65H050G4YS PDF 采用 TO247-4 封装的 650V 50mΩ SuperGaN FET	Standard	650	800	50	60	4	34	0	16	Through Hole	TO-247-4L	-55 to +150°C
TP65H070G4LSG PDF 采用 PQFN88 封装的 650V 72mΩ SuperGaN FET	Standard	650	800	72	85	4	29	0	8.4	Surface Mount	PQFN88	-55 to +150°C
TP65H070G4LSGB PDF 采用 PQFN88 封装的 650V 72mΩ SuperGaN FET	Standard	650	800	72	85	4	29	0	8.4	Surface Mount	PQFN88	-55 to +150°C
TP65H070G4PS PDF 采用 TO-220 封装的 650V 70mΩ SuperGaN FET	Standard	650	800	72	85	4	29	78	9	Through Hole	TO-220	-55 to +150°C
TP65H070G4QS PDF 采用 TOLL 封装的 650V 72mΩ SuperGaN FET	Standard	650	800	72	85	4	29	0	8.4	Surface Mount	TOLL	-55 to +150°C
TP65H070G4RS PDF 650V 72mΩ SuperGaN FET 封装 TOLT 封装	Standard	650	800	72	85	4	29	0	8.4	Surface Mount	TOLT	-55 to +150°C
TP65H100G4LSGB PDF 650V 92mΩ SuperGaN FET in PQFN88	Standard	650	800	92	110	3.6	18.9	0	14.4	Surface Mount	PQFN88	-55 to +150°C
TP65H100G4PS PDF 650V 92mΩ SuperGaN FET in TO-220	Standard	650	800	92	110	3.6	18.9	0	14.4	Through Hole	TO-220	-55 to +150°C
TP65H150BG4JSG PDF 采用 PQFN56 封装的 650V 150mΩ SuperGaN FET	Standard	650	800	150	180	2.4	16	35	8.8	Surface Mount	PQFN56	-55 to +150°C
TP65H150G4LSG PDF 采用 PQFN88 封装的 650V 150mΩ SuperGaN FET	Standard	650	800	150	180	4	16	40	8	Surface Mount	PQFN88	-55 to +150°C
TP65H150G4PS PDF 采用 TO-220 封装的 650V 150mΩ SuperGaN FET	Standard	650	800	150	180	4	16	40	8	Through Hole	TO-220	-55 to +150°C
TP65H300G4JSGB PDF 采用 PQFN56 封装的 650V 240mΩ SuperGaN FET	Standard	650	800	240	312	2.4	6.5	0	9.6	Surface Mount	PQFN56	-55 to +150°C
TP65H300G4LSG PDF 采用 PQFN88 封装的 650V 240mΩ SuperGaN FET	Standard	650	800	240	312	2.1	6.5	23	9.6	Surface Mount	PQFN88	-55 to +150°C
TP65H300G4LSGB PDF 采用 PQFN88 封装的 650V 240mΩ SuperGaN FET	Standard	650	800	240	312	2.4	6.5	0	9.6	Surface Mount	PQFN88	-55 to +150°C
TP65H480G4JSG PDF 采用 PQFN56 封装的 650V 480mΩ SuperGaN FET	Standard	650	800	480	560	2.1	3.6	14	9	Surface Mount	PQFN56	-55 to +150°C
TP65H480G4JSGB PDF 采用 PQFN56 封装的 50V 480mΩ SuperGaN FET	Standard	650	800	480	560	2.4	3.6	15.2	5	Surface Mount	PQFN56	-55 to +150°C

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Product Selector: GaN Power Discretes

Tips for Using This Parametric Table:

	Qualification Level	Vds min (V)	V(TR)DSS max (V)	RDSON (Typ) (mΩ)	RDSON (max) (mΩ)	Vth typ (V)	Id max @ 25°C (A)	Qrr typ (nC)	Qg typ (nC) (nC)	Mounting Type	Pkg. Type	Temp. Range	105°C Max. Case Temp.
(24) 推荐产品 (0) 衍生产品	Automotive Standard	最大值最小值	最大值最小值	最大值最小值	最大值最小值	最大值最小值	最大值最小值	最大值最小值	最大值最小值	Surface Mount Through Hole	PQFN56 PQFN88 TO-220 TO-247 TO-247-4L TO-263 TOLL TOLT	-55 to +150°C
器件号	Logical Operator									Logical Operator	Logical Operator	Logical Operator	Logical Operator
TP65H015G5WS PDF 采用 TO-247 封装的 650V 15mΩ SuperGaN FET	Standard	650	725	15	18	4	95	430	68	Through Hole	TO-247	-55 to +150°C
TP65H035G4QS PDF 650V 35mΩ SuperGaN FET 封装 TOLL	Standard	650	800	35	41	4	46.5	0	22	Surface Mount	TOLL	-55 to +150°C
TP65H035G4WS PDF 采用 TO-247 封装的 650V 35mΩ SuperGaN FET	Standard	650	800	35	41	4	46.5	150	22	Through Hole	TO-247	-55 to +150°C
TP65H035G4WSQA PDF 符合 AEC-Q101 标准的 650V 35mΩ SuperGaN FET 采用 TO-247 封装	Automotive	650	800	35	41	4	46.5	150	22	Through Hole	TO-247	-55 to +150°C
TP65H035G4YS PDF 采用 TO-247-4 封装的 650V 35mΩ SuperGaN FET	Standard	650	725	15	18	4	95	430	68	Through Hole	TO-247	-55 to +150°C
TP65H050G4BS PDF 采用 TO-263 封装的 650V 50mΩ SuperGaN FET （D2-PAK）	Standard	650	800	50	60	4	34	112	16	Surface Mount	TO-263	-55 to +150°C
TP65H050G4QS PDF 650V 50mΩ SuperGaN FET TOLL 封装	Standard	650	800	50	60	4	34	0	16	Surface Mount	TOLL	-55 to +150°C
TP65H050G4WS PDF 采用 TO-247 封装的 650V 50mΩ SuperGaN FET	Standard	650	800	50	60	4	34	112	16	Through Hole	TO-247	-55 to +150°C
TP65H050G4YS PDF 采用 TO247-4 封装的 650V 50mΩ SuperGaN FET	Standard	650	800	50	60	4	34	0	16	Through Hole	TO-247-4L	-55 to +150°C
TP65H070G4LSG PDF 采用 PQFN88 封装的 650V 72mΩ SuperGaN FET	Standard	650	800	72	85	4	29	0	8.4	Surface Mount	PQFN88	-55 to +150°C
TP65H070G4LSGB PDF 采用 PQFN88 封装的 650V 72mΩ SuperGaN FET	Standard	650	800	72	85	4	29	0	8.4	Surface Mount	PQFN88	-55 to +150°C
TP65H070G4PS PDF 采用 TO-220 封装的 650V 70mΩ SuperGaN FET	Standard	650	800	72	85	4	29	78	9	Through Hole	TO-220	-55 to +150°C
TP65H070G4QS PDF 采用 TOLL 封装的 650V 72mΩ SuperGaN FET	Standard	650	800	72	85	4	29	0	8.4	Surface Mount	TOLL	-55 to +150°C
TP65H070G4RS PDF 650V 72mΩ SuperGaN FET 封装 TOLT 封装	Standard	650	800	72	85	4	29	0	8.4	Surface Mount	TOLT	-55 to +150°C
TP65H100G4LSGB PDF 650V 92mΩ SuperGaN FET in PQFN88	Standard	650	800	92	110	3.6	18.9	0	14.4	Surface Mount	PQFN88	-55 to +150°C
TP65H100G4PS PDF 650V 92mΩ SuperGaN FET in TO-220	Standard	650	800	92	110	3.6	18.9	0	14.4	Through Hole	TO-220	-55 to +150°C
TP65H150BG4JSG PDF 采用 PQFN56 封装的 650V 150mΩ SuperGaN FET	Standard	650	800	150	180	2.4	16	35	8.8	Surface Mount	PQFN56	-55 to +150°C
TP65H150G4LSG PDF 采用 PQFN88 封装的 650V 150mΩ SuperGaN FET	Standard	650	800	150	180	4	16	40	8	Surface Mount	PQFN88	-55 to +150°C
TP65H150G4PS PDF 采用 TO-220 封装的 650V 150mΩ SuperGaN FET	Standard	650	800	150	180	4	16	40	8	Through Hole	TO-220	-55 to +150°C
TP65H300G4JSGB PDF 采用 PQFN56 封装的 650V 240mΩ SuperGaN FET	Standard	650	800	240	312	2.4	6.5	0	9.6	Surface Mount	PQFN56	-55 to +150°C
TP65H300G4LSG PDF 采用 PQFN88 封装的 650V 240mΩ SuperGaN FET	Standard	650	800	240	312	2.1	6.5	23	9.6	Surface Mount	PQFN88	-55 to +150°C
TP65H300G4LSGB PDF 采用 PQFN88 封装的 650V 240mΩ SuperGaN FET	Standard	650	800	240	312	2.4	6.5	0	9.6	Surface Mount	PQFN88	-55 to +150°C
TP65H480G4JSG PDF 采用 PQFN56 封装的 650V 480mΩ SuperGaN FET	Standard	650	800	480	560	2.1	3.6	14	9	Surface Mount	PQFN56	-55 to +150°C
TP65H480G4JSGB PDF 采用 PQFN56 封装的 50V 480mΩ SuperGaN FET	Standard	650	800	480	560	2.4	3.6	15.2	5	Surface Mount	PQFN56	-55 to +150°C