概览
描述
The TP70H480G4JSGB 700V, 480mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas' Gen IV SuperGaN® platform. It combines high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, featuring over 2kV ESD protection, to deliver exceptional performance and reliability.
Renesas' Gen IV SuperGaN platform uses advanced epitaxial and patented design technologies to simplify manufacturing while improving efficiency compared to silicon. These advancements are achieved through reduced gate charge, lower output capacitance, minimized crossover loss, and decreased reverse recovery charge.
特性
- 480mOhm, 700V GaN Device
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- 800V transient over-voltage capability
- Operation with E-mode gate drivers without the need for Zener protection
- Low QRR
- Reduced crossover loss
- Achieves increased efficiency in both hard- and soft-switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost
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应用
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| 类型 | 文档标题 | 日期 |
| 数据手册 | PDF 737 KB | |
| 应用说明 | PDF 372 KB | |
| 应用说明 | PDF 639 KB | |
| 应用说明 | PDF 3.39 MB | |
| 应用说明 | PDF 1.26 MB | |
| 其他 | ZIP 50 KB | |
| 指南 | PDF 225 KB | |
| 指南 | PDF 273 KB | |
| 指南 | PDF 391 KB | |
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