概览
描述
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
特性
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
- Low input capacitance Ciss = 7600 pF TYP.
- Built-in gate protection diode
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应用
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| 类型 | 文档标题 | 日期 |
| 数据手册 | PDF 287 KB | |
| 指南 | PDF 796 KB | |
| 应用说明 | PDF 648 KB 日本語 | |
| 宣传手册 | PDF 2.24 MB | |
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