| CAD 模型: | View CAD Model |
| Pkg. Type: | TDFN-8 |
| Pkg. Code: | |
| Lead Count (#): | 8 |
| Pkg. Dimensions (mm): | 1.5 x 2.0 mm |
| Pitch (mm): |
| Pb (Lead) Free | |
| Moisture Sensitivity Level (MSL) | |
| ECCN (US) | |
| HTS (US) |
| Lead Count (#) | 8 |
| Temp. Range (°C) | -40 to +125°C |
| Current Monitor Output | No |
| Discharge Circuit | No |
| Enable | Active High |
| FET Pass Device Type | Single N-Channel |
| IDS (A) | 4 |
| IDS Channel 1 (A) | 4 |
| Internal TVS Surge Protection | No |
| Output Discharge Circuit | No |
| Output Voltage Slew Rate set by | Capacitor |
| Over Current Protection (OCP) | Internally Fixed |
| Over Current Protection Setting Range Channel 1 | 6 - 6 |
| Over Temperature Protection (OTP) | Yes |
| Over Voltage Protection | No |
| Over Сurrent Protection Setting Range (A) | 6 - 6 |
| Parametric Category | Load Switches |
| Pkg. Dimensions (mm) | 1.5 x 2.0 mm |
| Pkg. Type | TDFN-8 |
| Power Good (PG), FAULT indicator | No |
| Power Monitor Output | No |
| Protection Features | Fixed CL, TSD |
| RDSON (Typ) (mΩ) | 8.4 |
| RDSON (Typ) Channel 1 (mΩ) | 8.4 |
| Ramp Control | Capacitor |
| Reverse current blocking | No |
| Reverse voltage detection | No |
| Short Circuit Protection | Yes |
| Undervoltage Protection | No |
| VD/VIN (Max) | VDD |
| VD/VIN (Min) | 0.9 |
| VDD Range (V) (V) | 2.5 - 5.5 |
| VDD max. (V) | 5.5 |
| VDD min. (V) | 2.5 |
| VDDl-VDDh (V) | 2.5 - 5.5 |
| VIN Channel 1 max. (V) | 5.5 |
| VIN Channel 1 min. (V) | 0.9 |
| VIN Range (V) | 0.9 - 5.5 |
| VIN Range Channel 1 (V) | 0.9 - 5.5 |
| VIN max. (V) | V5.5 |
| VIN min. (V) | V0.9 |
| VOUT Discharge Circuit | No |
The SLG59M1657V is a high‑performance 8.4mΩ, 4A single‑channel nFET load switch that can operate with a 2.5V to 5.5V VDD supply to switch power rails from as low as 0.9V up to the supply voltage. The SLG59M1657V incorporates two-level overload current protection, thermal shutdown protection, and inrush current control which can easily be adjusted by a small external capacitor. Using a proprietary MOSFET design, the SLG59M1657V achieves a stable 8.4mΩ RDSON across a wide input voltage range. In addition, the SLG59M1657V’s package also exhibits low thermal resistance for high-current operation. Fully specified over the -40 °C to 125 °C temperature range, the SLG59M1657V is packaged in a space‑efficient, low thermal resistance, RoHS‑compliant 1.5mm x 2.0mm STDFN package.