概览
描述
The HS-303CEH is an analog switch and a monolithic device that is fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. The HS-303CEH is pinout compatible and functionally equivalent to the HS-303RH. The HS-303CEH offers low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant across the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303CEH can operate with ±15V rails. Specifications See SMD 5962-95813 for detailed electrical specifications.
特性
- Electrically screened to DLA SMD# 5962-95813
- QML, per MIL-PRF-38535
- No latch-up, dielectrically isolated device islands
- Pinout and functionally compatible with the HS-303RH series of analog switches
- Analog signal range equal to the supply voltage range
- Low leakage : 150nA (max, post-rad)
- Low rON : 60Ω (max, post-rad)
- Low standby supply current : ±150µA (max, post-rad)
- Radiation assurance
- High dose rate (50 to 300rad(Si)/s) : 100krad(Si)
- Low dose rate (0.01rad(Si)/s) : 50krad(Si) (Note 1)
- Single event effects
- For LET = 60MeV·cm2/mg at 60° incident angle, <150pC charge transferred to the output of an off switch (based on SOI design calculations)
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| 类型 | 文档标题 | 日期 |
| 数据手册 | PDF 661 KB | |
| 宣传手册 | PDF 467 KB | |
| 技术摘要 | PDF 115 KB | |
| 涨价通告 | PDF 360 KB | |
| 其他 | ||
| 报告 | PDF 305 KB | |
| 应用笔记 | PDF 338 KB | |
| 应用笔记 | PDF 224 KB | |
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