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概览

描述

The ISL73244SEH features two low-power amplifiers optimized to provide maximum dynamic range. These operational amplifiers (op amps) feature a unique combination of rail-to-rail operation on the input and output and a slew enhanced front end that provides ultra fast slew rates positively proportional to a given step size. These features increase accuracy under both periodic and transient conditions. The ISL73244SEH also offers low power, low offset voltage, and low temperature drift, which makes it ideal for applications requiring both high DC accuracy and AC performance. With <5µs recovery for Single Event Transients (SET) (LETTH = 86. 4MeV•cm2/mg), the number of filtering components needed is drastically reduced. The ISL73244SEH is also immune to single-event latch-up because it is fabricated in the Renesas proprietary PR40 Silicon On Insulator (SOI) process. The amplifiers are designed to operate over a single supply range of 2. 7V to 40V or a split supply voltage range of ±1. 35V to ±20V. Applications for these amplifiers include precision instrumentation, data acquisition, precision power supply controls, and process controls. The ISL73244SEH is available in a 10 Ld hermetic ceramic flatpack that operates across the temperature range of -55°C to +125°C.

特性

  • Electrically screened to DLA SMD #5962-13248 Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
  • <5µs recovery from SET (LETTH = 86.4MeV•cm2/mg)
  •  
  • Rail-to-rail input and output
  • Wide gain bandwidth product 19MHz
  • Wide single and dual supply range 2.7V to 40V maximum
  • Low input offset voltage 400µV (+25°C, maximum)
  • Low current consumption (per amplifier) 1.2mA, typical
  • No phase reversal with input overdrive
  • Slew rate: Large signal 60V/µs
  • Operating temperature range -55°C to +125°C
  • ISL73244SEH radiation acceptance (see TID report) - Low dose rate (0.01rad(Si)/s) 50krad(Si)
  • SEE hardness (see SEE report for details) - SEL/SEB LETTH (VS = ±19V) 86.4MeV•cm2/mg

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