特性
- Low on-state resistance RDS(on) = 47 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on) = 64 mΩ MAX. (VGS = –5 V, ID = –10 A) RDS(on) = 70 mΩ MAX. (VGS = –4.5 V, ID = –10 A)
- Logic level drive type
- Gate to Source ESD protection diode built in
- Designed for automotive application and AEC-Q101 qualified
描述
The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Pch |
| Channels (#) | 1 |
| Standard Pkg. Type | SO8-FL 5x6 BSC |
| Gate Level | Logic |
| VDSS (Max) (V) | -60 |
| ID (A) | -20 |
| RDS (ON) (Max) @10V (mohm) | 47 |
| RDS (ON) (Max) @4.5V (mohm) | 70 |
| Pch (W) | 57 |
| Ciss (Typical) (pF) | 1605 |
| Qg typ (nC) | 34 |
| Series Name | NP Series |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| HSON | 5 x 5 x 1.45 | 8 |
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