特性
- Low on-state resistance RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A)
- Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON
描述
The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Pch |
| Channels (#) | 1 |
| Standard Pkg. Type | SO8-FL 5x6 |
| Gate Level | Logic |
| VDSS (Max) (V) | -30 |
| ID (A) | -50 |
| RDS (ON) (Max) @10V (mohm) | 8.4 |
| Pch (W) | 102 |
| Ciss (Typical) (pF) | 2300 |
| Qg typ (nC) | 64 |
| Series Name | NP Series |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| HSON | 5 x 5 x 1.45 | 8 |
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