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Renesas 异步 SRAM 采用高性能、高可靠性 CMOS 技术打造而成。 这种与创新的电路设计技术相结合,可为高速异步 SRAM 内存需求提供经济高效的卓越解决方案。 使用了全静态异步电路,运行时无需时钟或刷新。 Renesas 采用行业标准的封装选项,利用符合 RoHS 6/6 标准(绿色)的封装提供异步 SRAM。
异步 SRAM(又名异步静态随机存取存储器)是一种使用静态方法存储数据的存储器,只要器件有电源供应,数据即可保持不变。 这种存储器与需要不断刷新存储器中存储数据的 DRAM(动态 RAM)有所不同。
由于 Async SRAM 以静态方式存储数据,因此相比 DRAM 而言速度更快且功耗更低。 另一方面,SRAM 采用更复杂的电路拓扑构建而成,因此相比 DRAM 而言密度更低且生产成本更高。 因此,DRAM 通常被用作个人电脑主存储器,而异步 SRAM 则通常被用于较小的存储器应用,例如 CPU 高速缓冲存储器、硬盘驱动器缓冲器、网络设备、消费电子产品和设备。 同步 SRAM 使用时钟进行读写,而异步 SRAM 则通常由异步信号进行控制。
选择异步 SRAM 的关键参数包括:
PLP |
Density (Kb) |
Bus Width (bits) |
Core Voltage (V) |
Pkg. Type |
Organization |
I/O Voltage (V) |
Access Time (ns) |
Temp. Range |
Architecture |
|
---|---|---|---|---|---|---|---|---|---|---|
器件号 | ||||||||||
5.0V 8K x 8 Asynchronous Static RAM | N/A | 64 | 8 | 5 | CDIP | 8K x 8 | 5 | 70 | -55 to 125°C | Asynchronous |
5.0V 2K x 8 Asynchronous Static RAM | N/A | 16 | 8 | 5 | SOIC | 2K x 8 | 5 | 20, 25, 15 | -40 to 85°C, 0 to 70°C | Asynchronous |
5.0V 64K x 16 Asynchronous Static RAM | N/A | 1024 | 16 | 5 | TSOP | 64K x 16 | 5 | 12, 15, 20 | -40 to 85°C, 0 to 70°C | Asynchronous |
5.0V 128K x 8 Asynchronous Static RAM with Corner Power & Ground Pinout | N/A | 1024 | 8 | 5 | SOJ | 128K x 8 | 5 | 12, 15, 20 | -40 to 85°C, 0 to 70°C | Asynchronous |
5.0V 32K x 8 Asynchronous Static RAM | N/A | 256 | 8 | 5 | CDIP | 32K x 8 | 5 | 100 | -55 to 125°C | Asynchronous |
5.0V 8K x 8 Asynchronous Static RAM | N/A | 64 | 8 | 5 | CDIP | 8K x 8 | 5 | 45 | -55 to 125°C | Asynchronous |
3.3V 64K x 16 Bit Asynchronous Static RAM | N/A | 1024 | 16 | 3.3 | CABGA, TSOP | 64K x 16 | 3.3 | 10, 12, 15, 20 | -40 to 85°C, 0 to 70°C | Asynchronous |
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout | N/A | 1024 | 8 | 3.3 | SOJ | 128K x 8 | 3.3 | 10, 12, 15 | -40 to 85°C, 0 to 70°C | Asynchronous |
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout | N/A | 4096 | 16 | 3.3 | CABGA, TSOP | 256K x 16 | 3.3 | 10, 12, 15 | -40 to 85°C, 0 to 70°C | Asynchronous |
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout | N/A | 4096 | 8 | 3.3 | TSOP | 512K x 8 | 3.3 | 10, 12, 15 | -40 to 85°C, 0 to 70°C | Asynchronous |
Wide Temperature Range Version 4M High-speed SRAM (512-kword × 8-bit) | N/A | 4096 | 8 | 5 | SOJ | 512K x 8 | 5 | 12 | ||
4M High-speed SRAM (512-kword × 8-bit) | N/A | 4096 | 8 | 5 | SOJ | 512K x 8 | 5 | 12 | ||
Wide Temperature Range Version 4M High-speed SRAM (256-kword × 16-bit) | 2032 12月 | 4096 | 16 | 5 | SOJ, TSOP(44) | 256K x 16 | 5 | 12, 10 | ||
4M High-speed SRAM (256-kword × 16-bit) | 2032 12月 | 4096 | 16 | 5 | SOJ, TSOP(44) | 256K x 16 | 5 | 12, 10 | ||
Wide Temperature Range Version 4M High-speed SRAM (512-kword × 8-bit) | N/A | 4096 | 8 | 3.3 | SOJ | 512K x 8 | 3.3 | 12 | ||
4M High-speed SRAM (512-kword × 8-bit) | N/A | 4096 | 8 | 3.3 | SOJ | 512K x 8 | 3.3 | 12 | ||
Wide Temperature Range Version 4M High-speed SRAM (256-kword × 16-bit) | 2032 12月 | 4096 | 16 | 3.3 | SOJ, TSOP(44) | 256K x 16 | 3.3 | 12, 10 | ||
4M High-speed SRAM (256-kword × 16-bit) | 2032 12月 | 4096 | 16 | 3.3 | SOJ, TSOP(44) | 256K x 16 | 3.3 | 12, 10 |