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特性

  • Single 3V supply: 2.7V to 3.6V
  • Access time: 55ns (max.)
  • Current consumption: Standby: 1.2µA (typ.)
  • Common data input and output: Three-state output
  • Directly TTL compatible: All inputs and outputs
  • Battery backup operation

描述

The RMWV6416A is a 64-Mbit static RAM organized 4, 194, 304-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMWV6416A realizes higher density, higher performance, and low-power consumption. The device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 48-pin TSOP (I), 52-pin µTSOP (II), or 48-ball fine-pitch ball grid array.

产品参数

属性
Memory Density 64M
Organization 4M x 16
Access Time (ns) 55
Supply Voltage (V) -
Temp. Range (°C) -40 to +85

封装选项

Pkg. Type Pkg. Dimensions (mm) Lead Count (#)
FBGA(48) 8 x 8 x 1.2 48
TSOP(1) 18 x 12 x 1 48
TSOP(2) 11 x 9 x 1 52

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