特性
- Low on-state resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A)
RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A) - 2.5 V drive available
- Avalanche capability ratings
描述
The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Industrial |
| Nch/Pch | Pch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-252 / DPAK |
| Gate Level | Logic |
| VDSS (Max) (V) | -20 |
| ID (A) | -20 |
| RDS (ON) (Max) @4.5V (mohm) | 7 |
| Pch (W) | 36 |
| Ciss (Typical) (pF) | 4400 |
| Qg typ (nC) | 57 |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| MP-3ZK | 6 x 6 x 2.65 | 3 |
当前筛选条件
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