电源管理

瑞萨电子的 GaN FET 驱动器专用于在隔离和非隔离式拓扑结构中驱动增强模式 Gallium Nitride (GaN) FET。

产品选型表

    Processing table
    Output Type
    Supply Voltage (V)
    Gate Drive (V)
    ISOURCE (Max) (mA)
    ISINK (Max) (mA)
    Turn-Off Prop Delay (ns)
    Turn-On Prop Delay (ns)
    Lead Count (#)
    Pkg. Type
    器件号
    RAA226110
    Low-Side GAN FET Driver with Programmable Source Current and Adjustable Overcurrent Protection    		 Low Side 6.5 - 18 5.8 2000 3000 20 20 16 QFN
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