Renesas' GaN FET Drivers are designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated and non-isolated topologies.

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    Processing table
    器件号
    Output Type
    Supply Voltage (V)
    Gate Drive (V)
    ISOURCE (Max) (mA)
    ISINK (Max) (mA)
    Turn-Off Prop Delay (ns)
    Turn-On Prop Delay (ns)
    Lead Count (#)
    Pkg. Type
    RAA226110
    Low-Side GAN FET Driver with Programmable Source Current and Adjustable Overcurrent Protection    		 Low Side 6.5 - 18 5.8 2000 3000 20 20 16 QFN
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