概览

简介

The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL70040SEH operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH and ISL73040SEH have a 4. 5V gate drive voltage (VDRV) generated using an internal regulator which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL70040SEH and ISL73040SEH inputs can withstand voltages up to 14. 7V regardless of the VDD voltage. This allows the ISL70040SEH and ISL73040SEH inputs to be connected directly to most PWM controllers. The ISL70040SEH and ISL73040SEH split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths. The ISL70040SEH and ISL73040SEH operate across the military temperature range from -55°C to +125°C and are offered in an 8 Ld hermetically sealed ceramic Surface Mount Device (SMD) package or die form.

特性

  • Wide operating voltage range of 4.5V to 13.2V
  • Up to 14.7V logic inputs (regardless of VDD level)
  • Inverting and non-inverting inputs
  • Optimized to drive enhancement mode GaN FETs
  • Internal 4.5V regulated gate drive voltage
  • Independent outputs for adjustable turn-on/turn-off speeds
  • Full military temperature range operation
  • TA = -55°C to +125°C
  • TJ = -55°C to +150°C
  • Radiation hardness assurance (wafer-by-wafer)
  • High Dose Rate (HDR) (50-300rad(Si)/s): 100krad(Si) (ISL70040SEH only)
  • Low Dose Rate (LDR) (0.01rad(Si)/s): 75krad(Si)
  • SEE hardness (refer to the ISL70040SEH, ISL73040SEH SEE Report for details)
  • No SEB/L LETTH, VDD = 14.7V: 86MeV•cm2/mg
  • No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
  • Electrically screened to DLA SMD 5962-17233

文档

类型
日期
PDF 1.08 MB 数据手册
PDF 467 KB 手册
PDF 4.85 MB 手册
PDF 414 KB 应用文档
PDF 316 KB 报告
PDF 470 KB 日文 白皮书
PDF 356 KB Product Advisory
其他
PDF 846 KB 产品变更通告
PDF 548 KB 白皮书
PDF 349 KB 报告
PDF 251 KB 报告
PDF 533 KB 白皮书
PDF 338 KB 应用文档
14 items

设计和开发

软件与工具

软件与工具

Software title
Software type
公司
iSim:PE Offline Simulation Tool
iSim Personal Edition (iSim:PE) speeds the design cycle and reduces risk early in any project, identifying parts that can be used in current as well as next-generation designs.
Simulator 瑞萨电子
1 item

开发板与套件

开发板与套件

模型

模型

类型 日期
ZIP 77 KB 模型 - SPICE
SXSCH 104 KB 模型 - iSim
2 items

支持