概述
The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low-side Gallium Nitride (GaN) FET driver alongside the ISL70023SEH and ISL70024SEH enhancement mode GaN power transistors.
The ISL70040SEH drives enhancement-mode GaN FETs in isolated and boost-type topologies, supporting both non-inverting and inverting gate drive configurations.
The ISL70040SEH features a regulated 4.5V gate drive voltage (VDRV), UVLO protection, and split outputs offering the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths.
The 100V ISL70023SEH and 200V ISL70024SEH N-channel enhancement-mode GaN power transistors deliver low rDS(ON), low QG, and zero QRR for efficient high-frequency switching and reduced solution size.
特性
- Wide VDD range single
- 4.5V to 13.2V
- Location provided for load resistors to switch the GaN FET with a load
- SMA connector on the gate drive voltage to analyze the gate waveforms
- Drain/Source sense test points to analyze the drain to source waveforms
- Banana jack connectors for power supplies and drain/source connections
设计中的产品
| ISL70023SEH | 100V, 60A Enhancement Mode GaN Power Transistor |
| ISL70024SEH | 200V, 7.5A Enhancement Mode GaN Power Transistor |
| ISL73023SEH | 100V, 60A Enhancement Mode GaN Power Transistor |
试用样品与购买
ISL70040SEHEV3Z
有效| Pb (Lead) Free: | Yes |
| ECCN (US): | 9A515.e.1 |
| HTS (US): | 8473.30.1180 |
视频和培训
Renesas, a leading solution provider in the satellite and high-reliability industry, introduces its Gallium Nitride (GaN) technology with the ISL70024SEH and ISL70040SEH. Designed specifically for space applications, it delivers reliable performance under total ionizing dose (TID) and heavy ion exposure. Paired with a Renesas GaN driver and FET, it enables more efficient switching, higher frequency operation, reduced gate drive voltage, and a smaller solution size compared to traditional silicon devices.
