概览
描述
The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low side GaN FET driver alongside the ISL70023SEH and ISL70024SEH enhancement mode GaN power transistors.
The ISL70040SEH is designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. It operates across a supply range of 4.5V to 13.2V and offers both non-inverting and inverting inputs to satisfy non-inverting and inverting gate drive within a single device.
The ISL70040SEH has a 4.5V gate drive voltage (VDRV) that is generated using an internal regulator which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN/INB), and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The inputs of the ISL70040SEH can withstand voltages up to 14.7V regardless of the VDD voltage. This allows the inputs of the ISL70040SEH to be connected directly to most PWM controllers. The split outputs of the ISL70040SEH offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths.
The 100V ISL70023SEH and 200V ISL70024SEH are N-channel enhancement mode GaN power transistors. The GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size.
特性
- Wide VDD range single
- 4.5V to 13.2V
- Location provided for load resistors to switch the GaN FET with a load
- SMA connector on the gate drive voltage to analyze the gate waveforms
- Drain/Source sense test points to analyze the drain to source waveforms
- Banana jack connectors for power supplies and drain/source connections
应用
文档
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类型 | 文档标题 | 日期 |
手册 - 开发工具 | PDF 976 KB | |
数据手册 | PDF 521 KB | |
数据手册 | PDF 471 KB | |
报告 | PDF 433 KB | |
报告 | PDF 368 KB | |
报告 | PDF 369 KB | |
数据手册 | PDF 1.08 MB | |
报告 | PDF 251 KB | |
8 项目
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设计和开发
支持
视频和培训
Renesas, a leading solution provider in the satellite and high-reliability industry, introduces its Gallium Nitride (GaN) technology with the ISL70024SEH and ISL70040SEH. Designed specifically for space applications, it delivers reliable performance under total ionizing dose (TID) and heavy ion exposure. Paired with a Renesas GaN driver and FET, it enables more efficient switching, higher frequency operation, reduced gate drive voltage, and a smaller solution size compared to traditional silicon devices.
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