Hi-Rel GaN FET drivers deliver precise, high-speed switching to maximize the efficiency of GaN-based power systems. With adjustable gate drive voltages, low propagation delay, and powerful drive stages, these drivers ensure fast and efficient switching across various GaN FETs. Built-in protection features safeguard the gate from overvoltage conditions, ensuring reliable and robust operation in high-reliability applications.
Renesas offers products across many screening flows: QML-V, QML-V Equivalent, QML-P, QML-P Equivalent, and RT Plastic. Refer to the product datasheet to determine which flows are applicable.
Reliable & Precise Gate Control
Adjustable gate drive voltages ensure compatibility with various GaN FETs, while protection features prevent overvoltage stress for safe operation.
High-speed Switching
Low propagation delay and powerful drive stages enable fast, efficient switching, reducing losses and boosting performance.
Designed for Space
Engineered from the ground up for space applications, these GaN FET drivers mitigate SEE and TID effects, ensuring mission-critical reliability without additional design overhead.
