特性
- High hFE and low VCE(sat): hFE ≅ 800 (VCE = 2 V, IC = 3 A) VCE(sat) ≅ 0.12 V (IC = 3 A, IB = 0.03 A)
- On-chip C to E damper diode
- Mold package that does not require an insulating board or insulation bushing
描述
Support is limited to customers who have already adopted these products.
The 2SC4553 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFEE enables alleviation of the driver load.
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