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3.3V 64K x 16 Bit Asynchronous Static RAM

封装信息

Lead Count (#) 44
Pkg. Code PHG44
Pitch (mm) 0.8
Pkg. Type TSOP
Pkg. Dimensions (mm) 18.41 x 10.16 x 1.0

环境和出口类别

Pb (Lead) Free Yes
Moisture Sensitivity Level (MSL) 3
ECCN (US) NLR
HTS (US) 8542320041

产品属性

Lead Count (#) 44
Pb (Lead) Free Yes
Carrier Type Tray
Moisture Sensitivity Level (MSL) 3
Country of Assembly Taiwan
Country of Wafer Fabrication Taiwan, United States
Price (USD) | 1ku 2.01333
Access Time (ns) 10
Architecture Asynchronous
Bus Width (bits) 16
Core Voltage (V) 3.3
Density (Kb) 1024
I/O Voltage (V) 3.3 - 3.3
Length (mm) 18.41
MOQ 135
Organization 64K x 16
Package Area (mm²) 187.0
Pb Free Category e3 Sn
Pitch (mm) 0.8
Pkg. Dimensions (mm) 18.41 x 10.16 x 1.0
Pkg. Type TSOP
Qty. per Carrier (#) 135
Qty. per Reel (#) 0
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel No
Temp. Range 0 to 70°C
Thickness (mm) 1.0
Width (mm) 10.16

描述

The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.